dhg 20 c 1200 pb preliminary ns sonic fast recovery diode symbol definition r a t i n g s features / advantages: typ. max. i fsm i r a v 60 i a v f 2.22 r 1.50 k/w v r = 1 2 3 min. 10 t = 10 ms applications: v rrm v 1200 10 t vj v c = t vj c =m a 0.2 package: part number v r = t vj =c i f =a v t c = 105c d = p tot 85 w t c c = t vj 150 c -55 v i rrm = = 1200 10 10 t vj = 45c dhg 20 c 1200 pb v a 1200 v 1200 25 25 25 max. repetitive reverse voltage reverse current forward voltage virtual junction temperature total power dissipation max. forward surge current conditions unit 2.93 t vj c =25 c j j unction capacitance v = v; t 125 v f0 v 1.23 t vj = 150c r f 90 f = 1 mhz = c 25 m ? v 2.23 t vj =c i f =a v 10 3.14 i f =a 20 i f =a 20 2x threshold voltage slope resistance for power loss calculation only backside: cathode 9a t vj =c reverse recovery time a 10.5 200 350 ns (50 hz), sine t rr = 200 ns housing: high performance fast recovery diode low loss and soft recovery common cathode to-220 r industry standard outline r epoxy meets ul 94v-0 r rohs compliant r vj i rm max. reverse recovery current i f =a; 10 25 t= 125c vj -di f =a/s 250 /dt t rr v r =v 600 t vj =c 25 t= 125c vj a 4 600 pf thermal resistance junction to case thjc rectangular 0.5 planar passivated chips very low leakage current very short recovery time improved thermal behaviour very low irm-values very soft recovery behaviour avalanche voltage rated for reliable operation soft reverse recovery for low emi/rfi low irm reduces: - power dissipation within the diode - turn-on loss in the commutatin g switch antiparallel diode for high frequency switching devices antisaturation diode snubber diode free wheeling diode rectifiers in switch mode power supplies (smps) uninterruptible power supplies (ups) fav average forward current fav 125 ixys reserves the right to change limits, conditions and dimensions. ? 20110715a data according to iec 60747and per diode unless otherwise specified 2011 ixys all rights reserved
dhg 20 c 1200 pb preliminary i rms a per terminal 35 r thch k/w 0.50 m d nm 0.6 mounting torque 0.4 t stg c 150 storage temperature -55 weight g 2 symbol definition ratings typ. max. min. conditions rms current thermal resistance case to heatsink unit f c n 60 mounting force with clip 20 ordering delivery mode quantity code no. standard ordering number dhg 20 c 1200 pb 505280 tube 50 xxxxxx yyww z logo marking on product datecode assembly code abcdef product marking assembly line d h g 20 c 1200 pb part number diode sonic fast recovery diode extreme fast common cathode to-220ab (3) = = = 1 ) marking on product DHG20C1200PB current rating [a] reverse voltage [v] = = = = 1) i rms is typically limited by the pin-to-chip resistance (1); or by the current capability of the chip (2) . in case of (1) and a common cathode/anode configu ration with a non-isolated backside, the current capability can be increased by connecting the backside. ixys reserves the right to change limits, conditions and dimensions. ? 20110715a data according to iec 60747and per diode unless otherwise specified 2011 ixys all rights reserved
dhg 20 c 1200 pb preliminary dim. millimeter inches min. max. min. max. a 4.32 4.82 0.170 0.190 a1 1.14 1.39 0.045 0.055 a2 2.29 2.79 0.090 0.110 b 0.64 1.01 0.025 0.040 b2 1.15 1.65 0.045 0.065 c 0.35 0.56 0.014 0.022 d 14.73 16.00 0.580 0.630 e 9.91 10.66 0.390 0.420 e 2.54 bsc 0.100 bsc h1 5.85 6.85 0.230 0.270 l 12.70 13.97 0.500 0.550 l1 2.79 5.84 0.110 0.230 ?p 3.54 4.08 0.139 0.161 q 2.54 3.18 0.100 0.125 3x b2 e ?p q d l1 l 3x b 2x e c a2 h1 a1 a outlines to-220 ixys reserves the right to change limits, conditions and dimensions. ? 20110715a data according to iec 60747and per diode unless otherwise specified 2011 ixys all rights reserved
dhg 20 c 1200 pb preliminary 200 250 300 350 400 450 500 0.0 0.4 0.8 1.2 1.6 2.0 2.4 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 5 10 15 20 q rr [c] i f [a] v f [v] di f /dt [a/s] t vj =125c t vj = 25c t vj = 125c v r = 600 v 5a 10 a 20 a egrahcyrevoceresreverlacipyt2.gif scitsiretcarahcdrawrof.pyt1.gif q rr versus. di f /dt (125c) 200 250 300 350 400 450 500 0 4 8 12 16 20 24 i rm [a] di f /dt [a/s] t vj = 125c v r =600 v 5a 10 a 20 a fig. 3 typical peak reverse current i rr versus di f /dt (125c) 200 250 300 350 400 450 500 0 100 200 300 400 500 t rr [ns] di f /dt [a/s] 5a 10 a 20 a t vj = 125c v r =600v fig. 4 typ. recovery time t rr vs. di/dt (125c) fig. 5 typ. recovery energy e rec vs. di f /dt (125c) 200 250 300 350 400 450 500 0.1 0.2 0.3 0.4 0.5 0.6 e rec [mj] di f /dt [a/s] t vj =125c v r = 600 v 5a 10 a 20 a 0.001 0.01 0.1 1 10 0.1 1 10 r i i 0.385 0.0005 0.355 0.004 0.315 0.02 0.445 0.15 fig. 6 typ. transient thermal impedance z thjc [k/w] t p [s] ixys reserves the right to change limits, conditions and dimensions. ? 20110715a data according to iec 60747and per diode unless otherwise specified 2011 ixys all rights reserved
|
